2N5038 high current npn silicon transistor n stmicroelectronics preferred salestype n npn transistor description the 2N5038 is a silicon planar multiepitaxial npn transistors in jedec to-3 metal case. they are especially intended for high current and switching applications. internal schematic diagram december 2000 1 2 to-3 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 150 v v cex collector-emitter voltage (v be =-1.5v r be =100 w ) 150 v v cer collector-emitter voltage (r be < 50 w ) 110 v v ceo collector-emitter voltage (i b = 0) 90 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 20 a i cm collector peak current 30 a i b base current 5 a p tot total dissipation at t c 25 o c 140 w t stg storage temperature -65 to 200 o c ? 1/4
thermal data r thj-case thermal resistance junction-case max 1.25 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cev collector cut-off current (v be = -1.5v) v ce = 140 v v ce = 100 v t c = 150 o c50 10 ma ma i ceo collector cut-off current (i b = 0) v ce = 70 v 20 ma i ebo emitter cut-off current (i c = 0) v eb = 7 v v eb = 5 v 50 5 ma ma v ceo(sus) * collector-emitter sustaining voltage i c = 0.2 a 90 v v cer(sus) * collector-emitter sustaining voltage i c = 0.2 a r be = 50 w 110 v v cex(sus) * collector-emitter sustaining voltage i c = 0.2 a r be = 100 w v be =-1.5v 150 v v ce(sat) * collector-emitter saturation voltage i c = 12 a i b = 1.2 a i c = 20 a i b = 5 a 1 2.5 v v v be(sat) * collector-emitter saturation voltage i c = 20 a i b = 5 a 3.3 v v be * base-emitter voltage i c = 12 a v ce = 5 v 1.8 v h fe * dc current gain i c = 2 a v ce = 5 v i c = 12 a v ce = 5 v 50 20 250 100 h fe small signal current gain i c = 2 a v ce = 10 v f = 5 mhz 12 c cbo collector-base capacitance i e = 0 v cb = 10 v f = 1 mhz 300 pf t r t s t f rise time storage time fall time i c = 12 a v cc = 30 v i b1 = -i b2 = 1.2a 0.5 1.5 0.5 m s m s m s i s/b ** second breakdown collector current v ce = 28 v v ce = 45 v 5 0.9 a a e s/b second breakdown energy v be = -4 v r be = 20 w l = 180 m h 13 mj * pulsed: pulse durat ion = 300 m s, duty cycle 1.5 % ** pulsed: 0.5 s non repetitive pulse. 2N5038 2/4
dim. mm inch min. typ. max. min. typ. max. a 11.00 13.10 0.433 0.516 b 0.97 1.15 0.038 0.045 c 1.50 1.65 0.059 0.065 d 8.32 8.92 0.327 0.351 e 19.00 20.00 0.748 0.787 g 10.70 11.10 0.421 0.437 n 16.50 17.20 0.649 0.677 p 25.00 26.00 0.984 1.023 r 4.00 4.09 0.157 0.161 u 38.50 39.30 1.515 1.547 v 30.00 30.30 1.187 1.193 e b r c d a p g n v u o p003f to-3 mechanical data 2N5038 3/4
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